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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC5993 DESCRIPTION *Good Linearity of hFE *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 180V(Min) *Complement to Type 2SA2140 APPLICATIONS *Power amplification *For TV VM circuit ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 180 V 180 V 6 V 1.5 A 3.0 A 2.0 W 20 .cn mi e ICM Collector Current-Peak Collector Power Dissipation @ Ta=25 PC Collector Power Dissipation @TC=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC5993 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 180 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 0.5 V ICBO Collector Cutoff Current VCB= 180V; IE= 0 100 A IEBO Emitter Cutoff Current VEB= 6V; IC= 0 100 A hFE DC Current Cain IC= 0.1A; VCE= 5V 60 240 fT Current-Gain--Bandwidth Product IC= 0.2A; VCE= 10V; f= 10MHz COB Output Capacitance Switching Time, Resistance Loaded ton Turn-on Time tstg Storage Time w w scs .i w IE= 0; VCB= 10V; ftest= 1.0MHz .cn mi e 130 MHz 10 pF 0.1 s IC= 0.4A, IB1= -IB2= 0.04A; VCC= 100V 0.5 s tf Fall Time 0.1 s hFE Classifications Q 60-140 P 120-240 isc Websitewww.iscsemi.cn 2 |
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